depositing gallium method

2021-01-23T20:01:42+00:00
  • US7223441B2 - Method for depositing gallium oxide coatings ...

    A chemical vapor deposition process for laying down a gallium oxide coating on a glass substrate through the use of an organic ester and an inorganic gallium halide. The organic ester preferably...

  • Get Price
  • US5433169A - Method of depositing a gallium nitride-based ...

    A method of depositing a gallium nitride-based III-V Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The gallium nitride-based III-V Group compound semiconductor crystal layer is grown on the heated substrate ...

  • Get Price
  • Method of depositing layers of semi-insulating gallium ...

    A method of depositing a layer of semi-insulating gallium arsenide on a substrate by vapor phase epitaxy. The layer is deposited by thermally decomposing a gaseous mixture of arsine, gallium chloride and a small amount of water vapor to deposit a layer of gallium arsenide doped with oxygen.

  • Get Price
  • US6221232B1 - Electrolytic refining method for gallium and ...

    An electrolytic refining method for gallium by depositing refined gallium on a cathode in an electrolytic solution using a melted raw gallium material as an anode in an electrolytic cell is...

  • Get Price
  • US5474851A - Thin film of gallium oxide and method of ...

    A thin film of gallium oxidized with oxygen is produced by reactive vapor depositing gallium in a vacuum with oxygen followed by tempering. The refractive index (n) lies in the range of 1.2 to 1.3....

  • Get Price
  • Is it possible to electroplate from a gallium anode?

    Apr 25, 2019  Gallium is a difficult metal to deposit without excessive hydrogen generation on the cathode because Ga plating potential is high. Hydrogen generation on the cathode causes the deposition efficiency to be less than 100% because some of the deposition current gets used on forming the hydrogen gas, rather than the Ga film on the substrate or cathode.

  • Get Price
  • NASA Technical Reports Server (NTRS)

    Aug 31, 1990  The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate ...

  • Get Price
  • Compilation of Gallium Resource Data for Bauxite Deposits

    bauxite deposits are also important sources of Ga as a byproduct commodity because the close geochemical affinity of Ga to Al enables Ga to substitute easily in rock-forming aluminosilicates such as feldspar (Burton and others, 1959). Gallium also shows an affinity with iron (Fe) and zinc (Zn),

  • Get Price
  • METHOD OF ENHANCING ELECTRICAL CONDUCTION IN

    Oct 28, 2020  A method of producing gallium-doped zinc oxide films with enhanced conductivity. The method includes depositing a gallium-doped zinc oxide film on a substrate using a pulsed laser and subjecting the deposited gallium-dope zinc oxide film to a post-treatment effecting recrystallization in the deposited film, wherein the recrystallization enhances the conductivity of the film.

  • Get Price
  • Chemical vapor deposition - Wikipedia

    Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit.

  • Get Price
  • Method for vapor phase deposition of gallium nitride film ...

    Method for vapor phase deposition of gallium nitride film . United States Patent 4792467 . Abstract: A process for depositing a gallium nitride film on a substrate. A source compound is provided which has the formula: H 3 GaNR 3. Each R is independently selected from alkyl groups having from 1 to about 4 carbon atoms. ...

  • Get Price
  • A comparative study of the deposition conditions in the ...

    Jun 19, 1981  Several plasma-assisted methods used to deposit gallium nitride films at low substrate temperatures (below 450°C) are compared, with particular attent

  • Get Price
  • Identification of a Gallium-Containing Carbon Deposit ...

    The deposits were composed of metallic gallium cores surrounded by graphite skin layers. Interestingly, in the temperature range 560 to 660°C the structure consisted of graphitic carbon-walled tubes filled to varying extents with Ga. The addition of H2 to the carrier gas stream was found to be an effective method

  • Get Price
  • Is it possible to electroplate from a gallium anode?

    Apr 26, 2019  Gallium is a difficult metal to deposit without excessive hydrogen generation on the cathode because Ga plating potential is high. Hydrogen generation on the cathode causes the deposition efficiency to be less than 100% because some of the deposition current gets used on forming the hydrogen gas, rather than the Ga film on the substrate or cathode.

  • Get Price
  • METHOD OF ENHANCING ELECTRICAL CONDUCTION IN GALLIUM

    Oct 28, 2020  A method of producing gallium-doped zinc oxide films with enhanced conductivity. The method includes depositing a gallium-doped zinc oxide film on a substrate using a pulsed laser and subjecting the deposited gallium-dope zinc oxide film to a post-treatment effecting recrystallization in the deposited film, wherein the recrystallization enhances the conductivity of the film.

  • Get Price
  • Compilation of Gallium Resource Data for Bauxite Deposits

    bauxite deposits are also important sources of Ga as a byproduct commodity because the close geochemical affinity of Ga to Al enables Ga to substitute easily in rock-forming aluminosilicates such as feldspar (Burton and others, 1959). Gallium also shows an affinity with iron (Fe) and zinc (Zn),

  • Get Price
  • Preparation of pure gallium - NIST

    ofcrudegallium,containing5percentofindium,0.1percentoflead, and smaller amounts of silver,tin, and zinc, was carefullypurified. Inorderthatthe method ofpurification devised might be of general

  • Get Price
  • NASA Technical Reports Server (NTRS)

    Aug 31, 1990  The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate ...

  • Get Price
  • The method of cleaning metal gallium

    (57) Abstract: The invention relates to a method of cleaning metallic gallium, in alkaline solution by electrochemical processing. The inventive cleaning method includes processing in three cycles of liquid Galiya solution (0,130 is 0.135) mol/l (LiOHH 2 O)+(0,05-0,07) mol/l H 2 O 2 under the sequential increase in potential difference in the range from minus 0.1 to-1.2 In the surface phases ...

  • Get Price
  • Chemical vapor deposition - Wikipedia

    Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit.

  • Get Price
  • Electrolytic refining method for gallium and apparatus for ...

    An electrolytic refining method for gallium by depositing refined gallium on a cathode in an electrolytic solution using a melted raw gallium material as an anode in an electrolytic cell is disclosed, comprising applying a centrifugal force to the melted raw gallium material and discharging out a scum gathered in the central portion of the cell.

  • Get Price
  • High resolution X-ray photoelectron spectroscopy of beta ...

    May 30, 2008  Molecular beam epitaxy method , , metal organic chemical vapour deposition method and the pulsed laser deposition method have been reported as methods for depositing beta gallium oxide films. One of the other methods which have succeeded in producing high quality beta gallium oxide films is a method involving ultra high vacuum (UHV: under the ...

  • Get Price
  • Gallium arsenide - Wikipedia

    Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.. GaAs is often used as a substrate material for the epitaxial ...

  • Get Price
  • Heteroepitaxial growth of gallium phosphide on silicon ...

    The method includes an extra but simple process of depositing a thin phosphorus layer on a silicon substrate prior to the growth of gallium phosphide by a so-called halide transport method. Electronic and optical properties of the heterojunctions indicate that the interfaces between the gallium phosphide layers and silicon substrates had a ...

  • Get Price
  • Compilation of Gallium Resource Data for Bauxite Deposits

    bauxite deposits are also important sources of Ga as a byproduct commodity because the close geochemical affinity of Ga to Al enables Ga to substitute easily in rock-forming aluminosilicates such as feldspar (Burton and others, 1959). Gallium also shows an affinity with iron (Fe) and zinc (Zn),

  • Get Price
  • NASA Technical Reports Server (NTRS)

    Aug 31, 1990  The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate ...

  • Get Price
  • Identification of a Gallium-Containing Carbon Deposit ...

    The deposits were composed of metallic gallium cores surrounded by graphite skin layers. Interestingly, in the temperature range 560 to 660°C the structure consisted of graphitic carbon-walled tubes filled to varying extents with Ga. The addition of H2 to the carrier gas stream was found to be an effective method

  • Get Price
  • Single-source precursors to gallium and indium oxide thin ...

    Jun 01, 2011  1. Introduction. In recent years, due to their wide range of applications, there has been a huge interest in the production of gallium and indium oxide thin films .A variety of methods to deposit these films exists, as do a large selection of well-defined molecular compounds which contain a preformed M–O bond (M = Ga, In) that can be used in deposition processes without an additional

  • Get Price
  • Identification of a Gallium-Containing Carbon Deposit ...

    The deposits are produced during pyrolysis of trimethyl gallium and results in gas-phase depletion of Ga, which reduces the growth rate and reproducibility of GaN growth.

  • Get Price
  • Compilation of Gallium Resource Data for Bauxite Deposits

    Jun 03, 2014  Compilation of gallium concentrations in global bauxite deposits, with location, deposit size, major oxide data, and tonnage values provided. Table 2. Ranges and averages of gallium concentrations and calculated tonnages in the major bauxite provinces worldwide, plus average alumina and average total tonnages for deposits.

  • Get Price
  • High resolution X-ray photoelectron spectroscopy of beta ...

    May 30, 2008  Molecular beam epitaxy method , , metal organic chemical vapour deposition method and the pulsed laser deposition method have been reported as methods for depositing beta gallium oxide films. One of the other methods which have succeeded in producing high quality beta gallium oxide films is a method involving ultra high vacuum (UHV: under the ...

  • Get Price
  • Heteroepitaxial growth of gallium phosphide on silicon ...

    The method includes an extra but simple process of depositing a thin phosphorus layer on a silicon substrate prior to the growth of gallium phosphide by a so-called halide transport method. Electronic and optical properties of the heterojunctions indicate that the interfaces between the gallium phosphide layers and silicon substrates had a ...

  • Get Price
  • The method of cleaning metal gallium

    (57) Abstract: The invention relates to a method of cleaning metallic gallium, in alkaline solution by electrochemical processing. The inventive cleaning method includes processing in three cycles of liquid Galiya solution (0,130 is 0.135) mol/l (LiOHH 2 O)+(0,05-0,07) mol/l H 2 O 2 under the sequential increase in potential difference in the range from minus 0.1 to-1.2 In the surface phases ...

  • Get Price
  • Liquid-Phase Gallium Indium Alloy Electronics with ...

    extension of methods used in soft microfluidics to embed polydimethylsiloxane (PDMS) with microchannels of fluid.13−15 In addition to functioning as a stretchable electrical wire16,17 or strain gauge,1,5,11 microfluidic channels of liquid-phase gallium−indium

  • Get Price
  • US Patent for Gallium electrodeposition processes and ...

    Sep 02, 2010  Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater ...

  • Get Price
  • Preparation of pure gallium - NIST

    ofcrudegallium,containing5percentofindium,0.1percentoflead, and smaller amounts of silver,tin, and zinc, was carefullypurified. Inorderthatthe method ofpurification devised might be of general

  • Get Price
  • Estimation of gallium in a bauxite-ore deposit using an ...

    Energy-dispersive X-ray fluorescence (EDXRF) technique was used to determine the gallium content of bauxite ore samples collected from several sites located in the Jammu region of North India. To achieve an optimum detection efficiency, mono-energetic X-rays of a molybdenum-X-ray tube were used and, for quantitative estimation of the gallium content, the fundamental parameter method.

  • Get Price
  • Ion-beam-assisted molecular-beam epitaxy: a method to ...

    Ion-beam-assisted molecular-beam epitaxy: a method to deposit gallium nitride films with high crystalline quality

  • Get Price